NXP Releases the Industry’s Highest Power Density for RF LDMOS in Avionics
NXP’s leading-edge LDMOS technology delivers a 700 W RF power device in small footprint

HONOLULU, June 06, 2017 (GLOBE NEWSWIRE) -- IMS 2017 – NXP Semiconductors N.V. (NASDAQ:NXPI), the leader in RF power, today announced the industry’s most compact RF laterally diffused metal oxide semiconductor (LDMOS) solution for the automatic dependent surveillance-broadcast (ADS-B) and unmanned aerial vehicle (UAV) transponder markets. With more than 700 watts (W) of pulsed power packed in a 50 ohm power amplifier half the size of a credit card, the AFV10700H meets the size, weight, power and cost (SWaP-C) requirements of the aeronautics industry.

The AFV10700H is based on NXP’s leading-edge Airfast technology and is contained in a small NI-780 air cavity package, which occupies 40 percent less space than the standard NI-1230 package used by other LDMOS solutions of similar power level today. Its highly integrated on-chip pre-matching delivers a high output impedance that helps reduce the size of the matching circuitry, enabling a 1.3″ x 2.6″ (3.3 x 6.6 cm) power amplifier. Simultaneously, the industry-leading thermal resistance further reduces the weight of the transponder by enabling smaller heatsink designs.

“This new solution is an excellent example of NXP’s commitment to develop compelling products that address the stringent requirements in size and performance of L-Band pulsed applications,” said Pierre Piel, senior director and general manager for multimarket RF power at NXP. “High performance and ease of use are the key pillars of our design philosophy.”

Designed for pulsed applications such as commercial automatic dependent surveillance — broadcast (ADS-B), UAVs and military identification, friend or foe (IFF), the device outputs 700 W P1dB at 1090 megahertz (MHz) with 50 volts (V) and 56 percent efficiency. If operated at 52 V, it can achieve 850 W P1dB at 1030 MHz with 52 percent efficiency. The low thermal impedance supports high duty factor pulse trains, such as Mode-S Extended Length Message (ELM) and Link 16.

The new offering further densifies NXP’s portfolio of 960-1215 MHz LDMOS transistors for avionics applications, which now comprises 10 different power levels from 10-1300 W. This wide offering provides RF designers with flexibility and options for their transponder designs.

Availability and Showcase
The AFV10700H transistor is in production now and is supported by a reference circuit for 1030-1090 MHz narrowband operations. For more information, visit www.nxp.com/AFV10700H.

NXP is showcasing the new transistor at the International Microwave Symposium, June 6–8, in Honolulu, Booth 1132.

About NXP Semiconductors

NXP Semiconductors N.V. (NASDAQ:NXPI) enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 31,000 employees in more than 33 countries and posted revenue of $9.5 billion in 2016. Find out more at www.nxp.com.

For more information, please contact:

Americas
Jacey Zuniga
Tel: +1 512-895-7398
Email: jacey.zuniga@nxp.com

Europe
Martijn van der Linden
Tel: +31 6 10914896
Email: martijn.van.der.linden@nxp.com

Greater China / Asia
Esther Chang
Tel: +886 2 8170 9990
Email: esther.chang@nxp.com

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NXP Semiconductors Netherlands B.V.

Published

June 06, 2017
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