Press Release

New WLCSP MOSFETs set new benchmark in RDSon

We have just released six new small-signal MOSFETs in tiny Wafer Level Chip-Size Package (WLCSP) delivering unprecedented low RDSonperformance per PCB space. These P-Channel and N-Channel MOSFETs with low RDSon down to 15 mΩ are an ideal fit for mobile and space-constraint application where size and high efficiency are key. The new MOSFETs are available in WLCSP4 and WLCSP6 with a compact size of 0.78 × 0.78 × 0.35 mm and 0.98 × 1.48 × 0.35 mm respectively and extend our broad small-signal MOSFET portfolio in small DFN and standard SMD packages.

Download datasheets

12 V N-Channel MOSFETs

  • PMCM440VNE (WLCSP4, RDSon = 57 mΩ @ VGS = 4.5 V) 
  • PMCM4401VNE (WLCSP4, RDSon = 36 mΩ @ VGS = 4.5 V)  
  • PMCM650VNE   (WLCSP6, RDSon = 21 mΩ @ VGS = 4.5 V)
  • PMCM6501VNE (WLCSP6, RDSon = 15 mΩ @ VGS = 4.5 V)  

12 V P-Channel MOSFETs

  • PMCM4401VPE (WLCSP4, RDSon = 55 mΩ @ VGS = 4.5 V)  
  • PMCM6501VPE (WLCSP6, RDSon = 19 mΩ @ VGS = 4.5 V)  

Key features and benefits

  • Low RDSon per PCB space for high energy efficiency
  • Very small package size (0.98 × 1.48 × 0.35 mm for 4 ball WLCSP4) (0.78 × 0.78 × 0.35 mm for 6 ball WLCSP6)
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Key applications

  • Load switching for e.g. Smartphones
  • Battery switch
  • LED driver

 

Related links

MOSFET Product information pages

Published

September 7, 2015 at 12:32 PM EDT
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